| PART |
Description |
Maker |
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
| SSM3J135TU |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?
|
Toshiba Semiconductor
|
| TPCS8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCS8105 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| TPCF8101 TPCF810107 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| SSM3K333R-14 |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)
|
Toshiba Semiconductor
|
| TPCF8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
